FDPF10N60NZ Generic image

FDPF10N60NZ

Part No
FDPF10N60NZ
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM II, 600 V, 10 A, 750 mΩ, TO-220F
Datasheet
FDPF10N60NZ
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 10 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 750 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 50 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.475 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 38 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 38 W
    Rds On Max 750 mΩ
    Rise Time 50 ns
    Schedule B 8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 70 ns
    Turn-On Delay Time 25 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.27 g
    Height 19.5 mm
    Length 10.36 mm
    Width 4.9 mm
    added to cart View cart