FDPC8016S Generic image

FDPC8016S

Part No
FDPC8016S
Manufacturer
onsemi
Description
Transistor MOSFET Array Dual N-CH 25V 60A/100A 8-Pin PQFN T/R
Datasheet
FDPC8016S
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20 A
    Drain to Source Breakdown Voltage 25 V
    Drain to Source Resistance 3.8 mΩ
    Drain to Source Voltage (Vdss) 25 V
    Element Configuration Dual
    Fall Time 3 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 2.375 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 42 W
    Min Breakdown Voltage 25 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Rds On Max 3.8 mΩ
    Rise Time 4 ns
    Turn-Off Delay Time 38 ns
    Turn-On Delay Time 13 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 207.7333 mg
    Height 800 µm
    Length 5.1 mm
    Width 6.1 mm
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