FDS86141 Generic image

FDS86141

Part No
FDS86141
Manufacturer
onsemi
Description
N-Channel Power Trench® MOSFET 100V, 7A, 23mΩ
Datasheet
FDS86141
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 23 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 3.2 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 934 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 5 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Nominal Vgs 3.1 V
    Number of Elements 1
    Power Dissipation 5 W
    Rds On Max 23 mΩ
    Rise Time 3.2 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3.1 V
    Turn-Off Delay Time 14.3 ns
    Turn-On Delay Time 8.3 ns
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.5 mm
    Length 4 mm
    Width 5 mm
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