FDPF4N60NZ Generic image

FDPF4N60NZ

Part No
FDPF4N60NZ
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM II, 600 V, 3.8 A, 2.5 Ω, TO-220F
Datasheet
FDPF4N60NZ
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.8 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 2.5 Ω
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 12.8 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 510 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 28 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Rail/Tube
    Power Dissipation 28 W
    Rds On Max 2.5 Ω
    Rise Time 15.1 ns
    Turn-Off Delay Time 30.2 ns
    Turn-On Delay Time 12.7 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.27 g
    Height 16.07 mm
    Length 10.36 mm
    Width 4.9 mm
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