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FDS6676AS

Part No: FDS6676AS
Manufacturer: onsemi
Description: The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to
Datasheet: FDS6676AS
Test Report: Available
Samples: Available

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Specification	Value
Continuous Drain Current (ID)	14.5 A
Drain to Source Breakdown Voltage	30 V
Drain to Source Resistance	6 mΩ
Drain to Source Voltage (Vdss)	30 V
Element Configuration	Single
Fall Time	29 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	2.51 nF
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	2.5 W
Min Breakdown Voltage	30 V
Min Operating Temperature	-55 °C
Number of Channels	1
Number of Elements	1
Power Dissipation	1 W
Rds On Max	6 mΩ
Resistance	6 MΩ
Rise Time	12 ns
Schedule B	8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080
Threshold Voltage	1.5 V
Turn-Off Delay Time	43 ns
Turn-On Delay Time	10 ns
Case/Package	SOIC
Contact Plating	Tin
Mount	Surface Mount
Number of Pins	8
Number of Terminals	8
Weight	130 mg
Height	1.75 mm
Length	5 mm
Width	4 mm