FDMS86350 Generic image

FDMS86350

Part No
FDMS86350
Manufacturer
onsemi
Description
Single N-Channel 80 V 2.7 W 155 nC Silicon Surface Mount Mosfet - POWER 56-8
Datasheet
FDMS86350
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 25 A
    Drain to Source Breakdown Voltage 80 V
    Drain to Source Resistance 2.4 mΩ
    Drain to Source Voltage (Vdss) 80 V
    Element Configuration Single
    Fall Time 11 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 10.68 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 156 W
    Min Breakdown Voltage 80 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 2.7 W
    Rds On Max 2.4 mΩ
    Rise Time 34 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 40 ns
    Turn-On Delay Time 50 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 56.5 mg
    Height 1.1 mm
    Length 5.1 mm
    Width 6.25 mm
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