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FDMC86116LZ
- Part No
- FDMC86116LZ
- Manufacturer
- onsemi
- Description
- Transistor, MOSFET, N-channel, shielded gate, PowerTrench, 100V, 7.5A, 103mOhm
- Datasheet
- FDMC86116LZ
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3.3 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 103 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 1.4 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 310 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 19 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.3 W |
| Rds On Max | 103 mΩ |
| Rise Time | 1.3 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 10 ns |
| Turn-On Delay Time | 4.5 ns |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 180 mg |
| Height | 800 µm |
| Length | 3.3 mm |
| Width | 3.3 mm |
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