FDMC6675BZ Generic image

FDMC6675BZ

Part No
FDMC6675BZ
Manufacturer
onsemi
Description
The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
Datasheet
FDMC6675BZ
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9.5 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 14.4 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Element Configuration Single
    Fall Time 26 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 2.865 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 36 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 36 W
    Rds On Max 14.4 mΩ
    Resistance 14.4 MΩ
    Rise Time 10 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Threshold Voltage -1.9 V
    Turn-Off Delay Time 44 ns
    Turn-On Delay Time 11 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 200 mg
    Height 800 µm
    Length 3.3 mm
    Width 3.3 mm
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