FDMC6679AZ Generic image

FDMC6679AZ

Part No
FDMC6679AZ
Manufacturer
onsemi
Description
P-MOSFET transistor FDMC6679AZ Fairchild; -30V; -20A; 10mOhm; SMD MLP 3.3x3.3
Datasheet
FDMC6679AZ
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11.5 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 10 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Element Configuration Single
    Fall Time 46 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 3.97 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 41 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.3 W
    Rds On Max 10 mΩ
    Resistance 10 MΩ
    Rise Time 14 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -1.8 V
    Turn-Off Delay Time 63 ns
    Turn-On Delay Time 12 ns
    Case/Package TO-251-3
    Contact Plating Gold
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 165.33333 mg
    Height 800 µm
    Length 3.3 mm
    Width 3.3 mm
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