FDMC8200S Generic image

FDMC8200S

Part No
FDMC8200S
Manufacturer
onsemi
Description
Transistor MOSFET Array Dual N-CH 30V 23A/46A 8-Pin Power 33 T/R
Datasheet
FDMC8200S
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 20 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 660 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2.3 V
    Number of Channels 2
    Number of Elements 2
    Packaging Tape & Reel (TR)
    Power Dissipation 2.5 W
    Rds On Max 20 mΩ
    Resistance 20 MΩ
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 35 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 186 mg
    Height 800 µm
    Length 3 mm
    Width 3 mm
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