FDMC86102LZ Generic image

FDMC86102LZ

Part No
FDMC86102LZ
Manufacturer
onsemi
Description
N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ
Datasheet
FDMC86102LZ
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 24 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 2.5 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.29 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 41 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.6 V
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 2.3 W
    Rds On Max 24 mΩ
    Resistance 24 MΩ
    Rise Time 2.3 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 19 ns
    Turn-On Delay Time 7.1 ns
    Case/Package TO-220-3
    Contact Plating Gold, Silver
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 165.33333 mg
    Height 800 µm
    Length 3.3 mm
    Width 3.3 mm
    added to cart View cart