BSH205G2R Generic image

BSH205G2R

Part No
BSH205G2R
Manufacturer
NXP
Description
BSH205G2 Series 20 V 2 A 170 mOhm SMT P-Channel TrenchMOS FET - SOT-23
Datasheet
BSH205G2R
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Ambient Temperature Range High 150 °C
    Continuous Drain Current (ID) 2 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 170 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Fall Time 16 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 418 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 480 mW
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 890 mW
    Rds On Max 170 mΩ
    Rise Time 14 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Turn-Off Delay Time 43 ns
    Turn-On Delay Time 5 ns
    Case/Package TO-236-3
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Height 1.1 mm
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