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PMV250EPEA
- Part No
- PMV250EPEA
- Manufacturer
- NXP
- Description
- Mosfet Transistor, P Channel, -1.5 A, -40 V, 0.18 Ohm, -10 V, -1.7 V
- Datasheet
- PMV250EPEA
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Ambient Temperature Range High | 150 °C |
| Continuous Drain Current (ID) | 1.5 A |
| Drain to Source Breakdown Voltage | -40 V |
| Drain to Source Resistance | 240 mΩ |
| Drain to Source Voltage (Vdss) | -40 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 480 mW |
| Min Breakdown Voltage | 40 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 480 mW |
| Resistance | 180 mΩ |
| Threshold Voltage | -1 V |
| Turn-Off Delay Time | 26 ns |
| Turn-On Delay Time | 4 ns |
| Case/Package | SOT-23 |
| Contact Plating | Tin |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 1.1 mm |
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