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BUK755R2-40B
- Part No
- BUK755R2-40B
- Manufacturer
- NXP
- Description
- Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- BUK755R2-40B
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 75 A |
| Current Rating | 37 A |
| Drain to Source Breakdown Voltage | 40 V |
| Drain to Source Resistance | 5.2 mΩ |
| Element Configuration | Single |
| Fall Time | 56 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 203 W |
| Min Breakdown Voltage | 40 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 203 W |
| Rise Time | 51 ns |
| Turn-Off Delay Time | 81 ns |
| Voltage Rating (DC) | 40 V |
| Case/Package | TO-220AB |
| Contact Plating | Tin |
| Number of Terminals | 3 |
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