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SQD19P06-60L_GE3
- Part No
- SQD19P06-60L_GE3
- Manufacturer
- Vishay
- Description
- P-Channel 60-V (D-S), 175C Mosfet Rohs Compliant: Yes |Vishay SQD19P06-60L_GE3
- Datasheet
- SQD19P06-60L_GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20 A |
| Drain to Source Breakdown Voltage | -60 V |
| Drain to Source Resistance | 55 mΩ |
| Drain to Source Voltage (Vdss) | -60 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 46 W |
| Schedule B | 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 25 ns |
| Turn-On Delay Time | 7 ns |
| Number of Terminals | 2 |
| Height | 2.507 mm |
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