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SIHH11N60EF-T1-GE3
- Part No
- SIHH11N60EF-T1-GE3
- Manufacturer
- Vishay
- Description
- MOSFET N-CH 600V 11A POWERPAK8X8
- Datasheet
- SIHH11N60EF-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 11 A |
| Drain to Source Resistance | 357 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance | 1.078 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 114 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Rds On Max | 357 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 4 V |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 4 |
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