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SI4835DY-T1-E3
- Part No
- SI4835DY-T1-E3
- Manufacturer
- Vishay
- Description
- Power Field-Effect Transistor, 8A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Datasheet
- SI4835DY-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8 A |
| Drain to Source Resistance | 19 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Element Configuration | Single |
| Fall Time | 30 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 2.5 W |
| Rise Time | 12 ns |
| Turn-Off Delay Time | 32 ns |
| Turn-On Delay Time | 20 ns |
| Case/Package | SO |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 186.993455 mg |
| Height | 1.55 mm |
| Length | 5 mm |
| Width | 4 mm |
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