SPI11N60S5 Generic image

SPI11N60S5

Part No
SPI11N60S5
Manufacturer
Infineon
Description
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262 Tube
Datasheet
SPI11N60S5
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11 A
    Current Rating 11 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 380 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 20 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.46 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 125 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 125 W
    Rds On Max 380 mΩ
    Rise Time 35 ns
    Turn-Off Delay Time 150 ns
    Voltage Rating (DC) 600 V
    Case/Package TO-262-3
    Number of Pins 3
    Number of Terminals 3
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