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IRFHM8329TRPBF
- Part No
- IRFHM8329TRPBF
- Manufacturer
- Infineon
- Description
- Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
- Datasheet
- IRFHM8329TRPBF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 16 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 6.1 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Fall Time | 14 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.71 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 33 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 6.1 mΩ |
| Package Quantity | 4000 |
| Packaging | Tape & Reel |
| Power Dissipation | 2.6 W |
| Rds On Max | 6.1 mΩ |
| Rise Time | 74 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 1.7 V |
| Turn-Off Delay Time | 14 ns |
| Turn-On Delay Time | 14 ns |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Height | 800 µm |
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