Generic image
IPW60R190P6FKSA1
- Part No
- IPW60R190P6FKSA1
- Manufacturer
- Infineon
- Description
- Infineon IPW60R190P6POWER Mosfet, N Channel, 20.2 A, 600 V, 0.171 Ohm, 10 V, 4 V
- Datasheet
- IPW60R190P6FKSA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20.2 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 190 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Fall Time | 7 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Dual Supply Voltage | 600 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 190 mΩ |
| Package Quantity | 240 |
| Power Dissipation | 151 W |
| Rise Time | 8 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 45 ns |
| Turn-On Delay Time | 15 ns |
| Case/Package | TO-247-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 25.4 mm |
added to cart
View cart
Related Products