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SIRA02DP-T1-GE3
- Part No
- SIRA02DP-T1-GE3
- Manufacturer
- Vishay
- Description
- MOSFET N-CH 30V 50A PPAK SO-8
- Datasheet
- SIRA02DP-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 50 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 2 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 16 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 6.15 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 1.1 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 5 W |
| Rds On Max | 2 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 1.1 V |
| Turn-Off Delay Time | 42 ns |
| Turn-On Delay Time | 31 ns |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 506.605978 mg |
| Height | 1.12 mm |
| Length | 6.25 mm |
| Width | 5.26 mm |
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