SI5441BDC-T1-E3 Generic image

SI5441BDC-T1-E3

Part No
SI5441BDC-T1-E3
Manufacturer
Vishay
Description
Single P-Channel 20 V 0.045 Ohms Surface Mount Power Mosfet - 1206-8 ChipFET
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.4 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 45 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Element Configuration Single
    Fall Time 50 ns
    Gate to Source Voltage (Vgs) 12 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1.3 W
    Rds On Max 45 mΩ
    Resistance 45 mΩ
    Rise Time 50 ns
    Schedule B 8541290080
    Turn-Off Delay Time 50 ns
    Turn-On Delay Time 15 ns
    Case/Package SMD/SMT
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 84.99187 mg
    Height 1.1 mm
    Length 3.05 mm
    Width 1.65 mm
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