SIHF22N60E-GE3 Generic image

SIHF22N60E-GE3

Part No
SIHF22N60E-GE3
Manufacturer
Vishay
Description
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
Datasheet
SIHF22N60E-GE3
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 21 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 180 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 35 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.92 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 35 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Bulk
    Power Dissipation 35 W
    Rds On Max 180 mΩ
    Resistance 180 mΩ
    Rise Time 27 ns
    Threshold Voltage 2 V
    Turn-Off Delay Time 66 ns
    Turn-On Delay Time 18 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.000006 g
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