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SIR870DP-T1-GE3
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Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 60 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 6.4 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 8 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.84 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 104 W |
| Manufacturer Package Identifier | S17-0173-Single |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 6.25 W |
| Rds On Max | 6 mΩ |
| Resistance | 6 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 1.2 V |
| Turn-Off Delay Time | 38 ns |
| Turn-On Delay Time | 12 ns |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 506.605978 mg |
| Height | 1.12 mm |
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