SI2392ADS-T1-GE3 Generic image

SI2392ADS-T1-GE3

Part No
SI2392ADS-T1-GE3
Manufacturer
Vishay
Description
N-ch Mosfet SOT-23 100V 189MOHM @ 4.5V
Datasheet
SI2392ADS-T1-GE3
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.1 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 126 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 196 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Digi-Reel®
    Power Dissipation 1.25 W
    Rds On Max 126 mΩ
    Schedule B 8541290080
    Threshold Voltage 3 V
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 8 ns
    Case/Package TO-236-3
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Height 1.12 mm
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