Generic image
SIR668ADP-T1-RE3
- Part No
- SIR668ADP-T1-RE3
- Manufacturer
- Vishay
- Description
- MOSFET N-CH 100V 93.6A PPAK SO-8
- Datasheet
- SIR668ADP-T1-RE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 93.6 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 4.8 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Manufacturer Package Identifier | S17-0173-Single |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 6.25 W |
| Turn-Off Delay Time | 36 ns |
| Turn-On Delay Time | 21 ns |
| Number of Terminals | 5 |
| Height | 1.12 mm |
added to cart
View cart
Related Products