SIHB24N65E-E3 Generic image

SIHB24N65E-E3

Part No
SIHB24N65E-E3
Manufacturer
Vishay
Description
MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity: N Channel; Continuous Drain
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 24 A
    Drain to Source Resistance 145 mΩ
    Drain to Source Voltage (Vdss) 650 V
    Element Configuration Single
    Fall Time 69 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.74 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 250 W
    Min Breakdown Voltage 650 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 250 W
    Rds On Max 145 mΩ
    Rise Time 84 ns
    Threshold Voltage 2 V
    Turn-Off Delay Time 70 ns
    Turn-On Delay Time 24 ns
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.437803 g
    Height 4.83 mm
    Length 10.67 mm
    Width 9.65 mm
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