SI7459DP-T1-GE3 Generic image

SI7459DP-T1-GE3

Part No
SI7459DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CH 30V 13A PPAK SO-8
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 13 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 6.8 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 20 ns
    Gate to Source Voltage (Vgs) 25 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 5.4 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 1.9 W
    Rds On Max 6.8 mΩ
    Rise Time 20 ns
    Turn-Off Delay Time 180 ns
    Turn-On Delay Time 25 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
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