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SI7135DP-T1-GE3
- Part No
- SI7135DP-T1-GE3
- Manufacturer
- Vishay
- Description
- Single P-Channel 30 V 0.0039 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
- Datasheet
- SI7135DP-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 31.6 A |
| Drain to Source Breakdown Voltage | -30 V |
| Drain to Source Resistance | 3.9 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Fall Time | 50 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 8.65 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 104 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 6.25 W |
| Rds On Max | 3.9 mΩ |
| Resistance | 3.9 mΩ |
| Rise Time | 100 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -3 V |
| Turn-Off Delay Time | 110 ns |
| Turn-On Delay Time | 25 ns |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 506.605978 mg |
| Height | 1.12 mm |
| Length | 4.9 mm |
| Width | 5.89 mm |
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