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SI1071X-T1-E3
- Part No
- SI1071X-T1-E3
- Manufacturer
- Vishay
- Description
- Small Signal Field-Effect Transistor, 0.96A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Datasheet
- SI1071X-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 960 µA |
| Drain to Source Resistance | 167 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Dual Supply Voltage | -30 V |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Input Capacitance | 315 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 236 mW |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -1.45 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 236 µW |
| Rds On Max | 167 mΩ |
| Resistance | 244 mΩ |
| Rise Time | 25 ns |
| Termination | SMD/SMT |
| Threshold Voltage | -1.45 V |
| Turn-Off Delay Time | 36 ns |
| Turn-On Delay Time | 13 ns |
| Case/Package | SC |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Weight | 32.006612 mg |
| Height | 600 µm |
| Length | 1.7 mm |
| Width | 1.2 mm |
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