SI4486EY-T1 Generic image

SI4486EY-T1

Part No
SI4486EY-T1
Manufacturer
Vishay
Description
Small Signal Field-Effect Transistor, 5.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.4 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 25 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 20 V
    Max Operating Temperature 175 °C
    Max Power Dissipation 3.8 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1.8 W
    Rise Time 10 ns
    Turn-Off Delay Time 46 ns
    Turn-On Delay Time 20 ns
    Case/Package SO
    Number of Terminals 8
    Weight 506.605978 mg
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