SI2327DS-T1-E3 Generic image

SI2327DS-T1-E3

Part No
SI2327DS-T1-E3
Manufacturer
Vishay
Description
Trans Mosfet P-ch 200V 0.38A 3-PIN SOT-23 T/r
Datasheet
SI2327DS-T1-E3
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 380 mA
    Drain to Source Breakdown Voltage -200 V
    Drain to Source Resistance 2.45 Ω
    Element Configuration Single
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 510 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.25 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Digi-Reel®
    Power Dissipation 750 mW
    Rds On Max 2.35 Ω
    Resistance 2.35 Ω
    Threshold Voltage -4.5 V
    Case/Package SOT-23-3
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
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