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SI3430DV-T1
- Part No
- SI3430DV-T1
- Manufacturer
- Vishay
- Description
- Power Field-Effect Transistor, 1.8A I(D), 100V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Datasheet
- SI3430DV-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1.8 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 170 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 11 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.14 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 1.14 W |
| Rise Time | 11 ns |
| Turn-Off Delay Time | 16 ns |
| Turn-On Delay Time | 9 ns |
| Case/Package | TSOP |
| Number of Terminals | 6 |
| Weight | 19.986414 mg |
| Height | 1 mm |
| Length | 3.05 mm |
| Width | 1.65 mm |
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