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SI4473BDY-T1-E3
- Part No
- SI4473BDY-T1-E3
- Manufacturer
- Vishay
- Description
- Small Signal Field-Effect Transistor, 9.8A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Datasheet
- SI4473BDY-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9.8 A |
| Drain to Source Resistance | 11 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 14 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Case/Package | SOIC N |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
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