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SIHF16N50C-E3
- Part No
- SIHF16N50C-E3
- Manufacturer
- Vishay
- Description
- Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
- Datasheet
- SIHF16N50C-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 16 A |
| Drain to Source Resistance | 380 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| Element Configuration | Single |
| Fall Time | 31 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1.9 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 38 W |
| Min Breakdown Voltage | 500 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 38 W |
| Rds On Max | 380 mΩ |
| Rise Time | 156 ns |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 29 ns |
| Turn-On Delay Time | 27 ns |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.000006 g |
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