SI4116DY-T1-E3 Generic image

SI4116DY-T1-E3

Part No
SI4116DY-T1-E3
Manufacturer
Vishay
Description
MOSFET N-CH 25V 18A 8-SOIC
Datasheet
SI4116DY-T1-E3
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 12.7 A
    Drain to Source Resistance 8.6 mΩ
    Drain to Source Voltage (Vdss) 25 V
    Element Configuration Single
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 1.925 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 5 W
    Min Breakdown Voltage 25 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 8.6 mΩ
    Resistance 8.6 MΩ
    Rise Time 11 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 50 ns
    Turn-On Delay Time 13 ns
    Case/Package SO
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 186.993455 mg
    Height 1.55 mm
    Length 5 mm
    Width 4 mm
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