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SI4102DY-T1-GE3
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Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 2.7 mA |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 158 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 370 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 4.8 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Rds On Max | 158 mΩ |
| Rise Time | 10 ns |
| Threshold Voltage | 2 V |
| Turn-Off Delay Time | 12 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | SOIC |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 186.993455 mg |
| Height | 1.55 mm |
| Length | 5 mm |
| Width | 4 mm |
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