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SI7111EDN-T1-GE3
- Part No
- SI7111EDN-T1-GE3
- Manufacturer
- Vishay
- Description
- P-Channel 30 V 8.55 mOhm 52 W TrenchFET Gen III Mosfet-PowerPAK-1212-8
- Datasheet
- SI7111EDN-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 49.3 A |
| Drain to Source Breakdown Voltage | -30 V |
| Drain to Source Resistance | 8.55 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 52 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 4.1 W |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -1.6 V |
| Turn-Off Delay Time | 120 ns |
| Turn-On Delay Time | 25 ns |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Height | 1.17 mm |
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