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SI1021R-T1
- Part No
- SI1021R-T1
- Manufacturer
- Vishay
- Description
- Small Signal Field-Effect Transistor, 0.19A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Datasheet
- SI1021R-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 190 mA |
| Drain to Source Breakdown Voltage | -60 V |
| Drain to Source Resistance | 4 Ω |
| Drain to Source Voltage (Vdss) | -60 V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 mW |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 250 mW |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 700 µm |
| Length | 1.58 mm |
| Width | 760 µm |
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