SI5933DC-T1-E3 Generic image

SI5933DC-T1-E3

Part No
SI5933DC-T1-E3
Manufacturer
Vishay
Description
MOSFET 2P-CH 20V 2.7A 1206-8
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.7 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 110 mΩ
    Element Configuration Dual
    Fall Time 30 ns
    Gate to Source Voltage (Vgs) 8 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.1 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 1.1 W
    Rds On Max 110 mΩ
    Rise Time 30 ns
    Turn-Off Delay Time 27 ns
    Turn-On Delay Time 30 ns
    Case/Package SMD/SMT
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 84.99187 mg
    Height 1.1 mm
    Length 3.05 mm
    Width 1.65 mm
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