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SI3585DV-T1-E3
- Part No
- SI3585DV-T1-E3
- Manufacturer
- Vishay
- Description
- Trans MOSFET N/P-CH 20V 2A 6-Pin TSOP T/R / MOSFET N/P-CH 20V 2A 6-TSOP
- Datasheet
- SI3585DV-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 2 A |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 125 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Element Configuration | Dual |
| Fall Time | 34 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.15 W |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 600 mV |
| Number of Elements | 2 |
| Power Dissipation | 830 mW |
| Rds On Max | 125 mΩ |
| Resistance | 200 MΩ |
| Rise Time | 34 ns |
| Threshold Voltage | 600 mV |
| Turn-Off Delay Time | 19 ns |
| Turn-On Delay Time | 11 ns |
| Case/Package | TSOP |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Height | 1 mm |
| Length | 3.1 mm |
| Width | 1.7 mm |
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