SI4465DY Generic image

SI4465DY

Part No
SI4465DY
Manufacturer
Vishay
Description
Power Field-Effect Transistor, 14A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Datasheet
SI4465DY
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 14 A
    Drain to Source Resistance 9 mΩ
    Drain to Source Voltage (Vdss) -8 V
    Element Configuration Single
    Fall Time 190 ns
    Gate to Source Voltage (Vgs) 8 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 8 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rise Time 55 ns
    Turn-Off Delay Time 380 ns
    Turn-On Delay Time 45 ns
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 186.993455 mg
    Height 1.55 mm
    Length 5 mm
    Width 4 mm
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