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SI3483CDV-T1-E3
- Part No
- SI3483CDV-T1-E3
- Manufacturer
- Vishay
- Description
- Single P-Channel 30 V 0.053 Ohm 18 nC 2 W Silicon Surface Mount Mosfet - SC-74
- Datasheet
- SI3483CDV-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 6.1 A |
| Drain to Source Resistance | 34 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 4.2 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2 W |
| Rds On Max | 34 mΩ |
| Rise Time | 15 ns |
| Threshold Voltage | -3 V |
| Turn-Off Delay Time | 30 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | TSOP |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Weight | 19.986414 mg |
| Height | 1 mm |
| Length | 3.05 mm |
| Width | 1.65 mm |
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