Generic image
SI1912EDH-T1
- Part No
- SI1912EDH-T1
- Manufacturer
- Vishay
- Description
- Small Signal Field-Effect Transistor, 1.13A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Datasheet
- SI1912EDH-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1.13 A |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 280 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Element Configuration | Dual |
| Fall Time | 85 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 740 mW |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Power Dissipation | 740 mW |
| Rise Time | 85 ns |
| Turn-Off Delay Time | 350 ns |
| Turn-On Delay Time | 45 ns |
| Case/Package | SOT-363-6 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Weight | 7.512624 mg |
| Height | 1 mm |
| Length | 2 mm |
| Width | 1.25 mm |
added to cart
View cart
Related Products