SIA914ADJ-T1-GE3 Generic image

SIA914ADJ-T1-GE3

Part No
SIA914ADJ-T1-GE3
Manufacturer
Vishay
Description
SiA914ADJ Series 20 V 0.043 Ohm Dual N-Channel MOSFET - PowerPAK SC-70-6 Dual
Datasheet
SIA914ADJ-T1-GE3
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.5 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 43 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Element Configuration Dual
    Fall Time 5 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 470 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 7.8 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 1.9 W
    Rds On Max 43 mΩ
    Rise Time 20 ns
    Turn-Off Delay Time 25 ns
    Turn-On Delay Time 7 ns
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 28.009329 mg
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