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SI1967DH-T1-GE3
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Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1 A |
| Drain to Source Breakdown Voltage | -20 V |
| Drain to Source Resistance | 490 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Element Configuration | Dual |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Input Capacitance | 110 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.25 W |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Power Dissipation | 740 mW |
| Rds On Max | 490 mΩ |
| Resistance | 490 MΩ |
| Rise Time | 27 ns |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Threshold Voltage | -1 V |
| Turn-Off Delay Time | 12 ns |
| Turn-On Delay Time | 2 ns |
| Case/Package | SOT-363 |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Weight | 28.009329 mg |
| Height | 1.1 mm |
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