SI1032X-T1-GE3 Generic image

SI1032X-T1-GE3

Part No
SI1032X-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 20V 200MA SC89-3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 200 mA
    Drain to Source Resistance 5 Ω
    Drain to Source Voltage (Vdss) 20 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 6 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 340 mW
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Digi-Reel®
    Power Dissipation 300 mW
    Rds On Max 5 Ω
    Resistance 5 Ω
    Rise Time 25 ns
    Schedule B 8541210080
    Threshold Voltage 700 mV
    Turn-Off Delay Time 50 ns
    Turn-On Delay Time 50 ns
    Case/Package SC
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 29.993795 mg
    Height 800 µm
    Length 1.7 mm
    Width 950 µm
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