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SI1031R-T1-GE3
- Part No
- SI1031R-T1-GE3
- Manufacturer
- Vishay
- Description
- SI1031R-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 100 MA, 20 V, 3-PIN SC-75A
- Datasheet
- SI1031R-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 140 mA |
| Drain to Source Resistance | 8 Ω |
| Drain to Source Voltage (Vdss) | -20 V |
| Element Configuration | Single |
| Fall Time | 30 ns |
| Gate to Source Voltage (Vgs) | 6 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 280 mW |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 250 mW |
| Rds On Max | 8 Ω |
| Resistance | 8 Ω |
| Rise Time | 30 ns |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Threshold Voltage | 900 mV |
| Turn-Off Delay Time | 60 ns |
| Turn-On Delay Time | 55 ns |
| Case/Package | SC |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 800 µm |
| Length | 1.58 mm |
| Width | 760 µm |
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