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SGH10N60RUFDTU
- Part No
- SGH10N60RUFDTU
- Manufacturer
- onsemi
- Description
- Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,16A I(C),to-247Var Rohs Compliant: Yes |Onsemi SGH10N60RUFDTU
- Datasheet
- SGH10N60RUFDTU
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 2.2 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Current Rating | 10 A |
| Element Configuration | Single |
| Fall Time | 220 ns |
| Max Collector Current | 16 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 75 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 75 W |
| Reverse Recovery Time | 42 ns |
| Voltage Rating (DC) | 600 V |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.401 g |
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