RFD16N06LESM9A Generic image

RFD16N06LESM9A

Part No
RFD16N06LESM9A
Manufacturer
onsemi
Description
MOSFET Transistor, N Channel, 16 A, 60 V, 47 mohm, 5 V, 3 V
Datasheet
RFD16N06LESM9A
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 16 A
    Current Rating 16 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 47 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 35 ns
    Gate to Source Voltage (Vgs) 10 V
    Input Capacitance 1.35 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 90 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 90 W
    Rds On Max 47 mΩ
    Rise Time 60 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3 V
    Turn-Off Delay Time 48 ns
    Turn-On Delay Time 11 ns
    Voltage Rating (DC) 60 V
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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